Czochralski growth and characterization of piezoelectric single crystals with langasite structure:: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LCN) and La3Ga5.5Ta0.5O14 (LGT) II.: Piezoelectric and elastic properties
Czochralski growth and characterization of piezoelectric single crystals with langasite structure:: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LCN) and La3Ga5.5Ta0.5O14 (LGT) II.: Piezoelectric and elastic properties
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DOI：
10.1016/s0022-0248(00)00440-1
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发表时间：
2000-07-01
影响因子：
1.8
通讯作者：
Straube, U
中科院分区：
文献类型：
--
作者：
Bohm, J;Chilla, E;Straube, U
质量密度，相对介电常数，和piczoelectric材料参数上的LGS，LGN，和LGT生长具有高的结构完善的直拉技术的单晶体确定。通过测量和严格比较体声波（BAW）和表面声波（SAW）的传播速度，得到了弹性刚度和弹性顺应性的优化值。(C)2000 Elsevier Science B.V.保留所有权利。
Mass densities, relative dielectric constants, and piczoelectric material parameters were determined on single crystals of LGS, LGN, and LGT grown with high structural perfection by the Czochralski technique. Optimized values of the elastic stiffnesses and elastic compliances were derived by measuring and critically comparing the propagation velocities of both bulk (BAW) and surface acoustic waves (SAW). (C) 2000 Elsevier Science B.V. All rights reserved.