Hybrid semiconductor electrodes for light-driven photoelectrochemical switches
Hybrid semiconductor electrodes for light-driven photoelectrochemical switches
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DOI：
10.1016/j.electacta.2008.01.077
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发表时间：
2008-05-30
影响因子：
6.6
通讯作者：
Kisch, Horst
中科院分区：
文献类型：
--
作者：
Long, Min-ce;Beranek, Radim;Kisch, Horst
混合（n-/p-型）半导体电极代表用于制造波长控制的光电开关的可行策略。制备了四种纳米晶粉末在ITO玻璃上的随机组装体复合电极（BiVO 4/Co 3 O 4，BiVO 4/CuO，TiO 2/Co 3 O 4，TiO 2/CuO），并研究了它们的光电流响应随波长的变化。前三个电极表现出波长控制的光电流方向的LED开关，而后者只显示阴极光电流。开关效应的先决条件是n型组分的价带和导带边的电势比p型组分的更正。影响光电流响应的其他关键参数是所施加的电势以及电子和空穴清除剂的存在。(C)2008爱思唯尔有限公司保留所有权利。
Hybrid (n-/p-type) semiconductor electrodes represent a viable strategy for fabrication of wavelength-controlled optoelectronic switches. Four hybrid electrodes (BiVO4/Co3O4, BiVO4/CuO, TiO2/Co3O4, TiO2/CuO) were prepared in the form of random assemblies of nanocrystalline powders on ITO-glass and the wavelength dependence of their photocurrent response was investigated. The former three electrodes exhibited wavelength-control led switching of photocurrent direction, whereas the latter one showed exclusively cathodic photocurrents. The prerequisite for the switching effect is that the potentials of the valence and conduction band edges of an n-type component are more positive than those of a p-type one. Further key parameters influencing the photocurrent response are the applied potential and the presence of electron and hole scavengers. (C) 2008 Elsevier Ltd. All rights reserved.