Stress dependence of the charge-density-wave transitions in Nb Se 3 and Ta S 3
Stress dependence of the charge-density-wave transitions in Nb Se 3 and Ta S 3
复制标题
Nb Se 3 和 Ta S 3 中电荷密度波跃迁的应力依赖性
DOI：
10.1103/physrevb.29.5656
复制
发表时间：
1984
影响因子：
3.7
通讯作者：
J. Brill
中科院分区：
文献类型：
--
作者：
R. Lear;M. Skove;E. Stillwell;J. Brill
我们测量了单斜Nb ${\mathrm{Se}}_{3}$和正交Ta ${\mathrm{S}}_{3}$中电荷密度波（CDW）跃迁的变化，这是由沿高对称（生长）轴施加的应力引起的。对于Nb的上部转变${\mathrm{Se}}_{3}$, $\frac{d{T}_{1}}{d\ensuremath{\sigma}}=\ensuremath{-}4.4$ K/GPa，当应力达到5 GPa时，转变导致的阻力增加$\ensuremath{\Delta}R$几乎不受影响，CDW的临界运动场${E}_{c}$随着应力的增加而增加。对于Nb的低转变${\mathrm{Se}}_{3}$, $\frac{d{T}_{2}}{d\ensuremath{\sigma}}=\ensuremath{-}0.4$ K/GPa, $\ensuremath{\Delta}R$在5 GPa时增加了一倍以上，${E}_{c}$相对不受影响。在低应力条件下，ta${\mathrm{S}}_{3}$中的222-K转变以-15 K/GPa的速率降低。当应力高于2.5 GPa时，Ta ${\mathrm{S}}_{3}$的阻力再次开始增加，这可能是由于第二次应力诱导的CDW转变。热滞回和应力滞回在t1 ${\mathrm{S}}_{3}$中均见于100 ～ 200k之间。
We have measured the change in the charge-density-wave (CDW) transitions in monoclinic Nb${\mathrm{Se}}_{3}$ and orthorhombic Ta${\mathrm{S}}_{3}$ caused by stress applied along the high-symmetry (growth) axis. For the upper transition in Nb${\mathrm{Se}}_{3}$, $\frac{d{T}_{1}}{d\ensuremath{\sigma}}=\ensuremath{-}4.4$ K/GPa for stresses up to 5 GPa, the increase in the resistance due to the transition, $\ensuremath{\Delta}R$, is almost unaffected, and the critical field for motion of the CDW, ${E}_{c}$, increases with stress. For the lower transition in Nb${\mathrm{Se}}_{3}$, $\frac{d{T}_{2}}{d\ensuremath{\sigma}}=\ensuremath{-}0.4$ K/GPa, $\ensuremath{\Delta}R$ more than doubles at 5 GPa, and ${E}_{c}$ is relatively unaffected. The 222-K transition in Ta${\mathrm{S}}_{3}$ decreases at a rate of -15 K/GPa for low stresses. At stresses above 2.5 GPa the resistance of Ta${\mathrm{S}}_{3}$ begins to increase again, possibly due to a second stress-induced CDW transition. Both thermal hysteresis and stress hysteresis are seen in Ta${\mathrm{S}}_{3}$ between about 100 and 200 K.