A full adder using resonant-tunneling hot electron transistors (RHETs)
A full adder using resonant-tunneling hot electron transistors (RHETs)
复制标题
使用谐振隧道热电子晶体管 (RHET) 的全加器
DOI：
10.1109/16.168752
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发表时间：
1992
影响因子：
3.1
通讯作者：
N. Yokoyama
中科院分区：
文献类型：
--
作者：
K. Imamura;M. Takatsu;T. Mori;T. Adachihara;H. Ohnishi;S. Muto;N. Yokoyama
全加器使用InGaAs-In（AlGa）As RHFET演示。RHET的发射极和基极使用SiO/sub 2/侧壁和倾斜束离子铣削进行自对准。共基极电流增益约为0.9，发射极电流峰谷比为10。RHET全加器由一个三输入异或逻辑门和一个三输入择多逻辑门构成。作者证实了全加器在77 K下正常工作.全加器只需要7个Rheums，大约是所需双极晶体管的四分之一。>
Full adders are demonstrated using InGaAs-In(AlGa)As RHETs. The RHET's emitter and base electrodes were self-aligned using a SiO/sub 2/ sidewall and angled beam ion milling. The common-base current gain was about 0.9 and the emitter current peak-to-valley ratio was 10. The RHET full adder was constructed using a three-input exclusive-OR logic gate and a three-input majority logic gate. The authors confirmed normal operation of the full adder at 77 K. Only seven RHETs were needed for the full adder, about one-quarter of bipolar transistors that would have been required. >