Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor
Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor
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DOI：
10.1109/imfedk.2013.6602233
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
K. Mukai;T. Onaka;K. Koike;T. Maemoto;S. Sasa;M. Yano;S. Kadokura;Yutaka Nakamitsu
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文献类型：
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作者：
K. Mukai;T. Onaka;K. Koike;T. Maemoto;S. Sasa;M. Yano;S. Kadokura;Yutaka Nakamitsu
采用对靶溅射法，以ZnO层为沟道层，高k Ta 2 O 5层为栅绝缘层，制备了高性能透明离子敏感场效应晶体管（ISFET）。ISFET具有2.3 mS的高介电常数、<±0.5 μA/h的低漂移电流、<2 nA的小栅漏电流和~0.1 V的小滞后宽度。典型的pH灵敏度为~84 μA/pH和~55 mV/pH，pH变化的时间常数小至10 s。这些参数与市售Si ISFET的参数相当。
High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.