Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
复制标题
DOI：
10.1021/nl4013166
复制
发表时间：
2013-06-01
期刊：
影响因子：
10.8
通讯作者：
Shan, Jie
中科院分区：
文献类型：
--
作者：
He, Keliang;Poole, Charles;Shan, Jie
我们通过施加单轴拉伸应变，展示了在柔性衬底上原子级薄的二硫化钼电子结构的连续调控。通过吸收光谱和光致发光光谱确定，对于直接带隙跃迁，每施加百分之一的应变，红移速率约为70毫电子伏特，对于间接带隙跃迁，红移速率是直接带隙跃迁的1.6倍。我们的结果与第一性原理计算非常吻合，展示了二维晶体在柔性电子学和光电子学应用中的潜力。
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of similar to 70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.