Plasmonic gain in current biased tilted Dirac nodes.
Plasmonic gain in current biased tilted Dirac nodes.
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DOI：
10.1038/s41467-022-35139-y
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发表时间：
2022-12-12
影响因子：
16.6
通讯作者：
Low, Tony
中科院分区：
文献类型：
--
作者：
Park, Sang Hyun;Sammon, Michael;Mele, Eugene;Low, Tony
表面等离子体可以使光受到严格的限制，但它受到高本征电子损失的影响。结果表明，激发电子的受激发射可以将能量传递给等离子体，并补偿较高的本征损失。到目前为止，这些实现依赖于引入耦合到表面等离子激元的外部增益介质。在这里，我们提出，当沿移位的电子-空穴口袋施加电流偏置时，具有紧密位置的电子和空穴费米口袋的二维材料中的等离子体激元可以被放大，而不需要外部的增益介质。作为一个典型的例子，我们考虑了1T-MX2材料家族中的WTe2，它的电子结构可以用类型II倾斜的大质量狄拉克模型来描述。我们发现，在实验上可获得的电流为mAμm−1量级时，非局域等离子体激元响应经历了显著的增益。此外，从等频曲线得到的等离子体激元的群速度表明，当电流沿狄拉克节点倾斜的方向施加时，被放大的等离子体激元沿垂直于狄拉克节点倾斜的方向高度平行。在这里，作者预言，当沿移位的电子-空穴口袋施加电流偏置时，具有紧密位置的电子和空穴费米口袋的二维材料中的等离子体激元可以被放大，而不需要外部的增益介质。
Surface plasmons, which allow tight confinement of light, suffer from high intrinsic electronic losses. It has been shown that stimulated emission from excited electrons can transfer energy to plasmons and compensate for the high intrinsic losses. To-date, these realizations have relied on introducing an external gain media coupled to the surface plasmon. Here, we propose that plasmons in two-dimensional materials with closely located electron and hole Fermi pockets can be amplified, when an electrical current bias is applied along the displaced electron-hole pockets, without the need for an external gain media. As a prototypical example, we consider WTe2 from the family of 1T-MX2 materials, whose electronic structure can be described within a type-II tilted massive Dirac model. We find that the nonlocal plasmonic response experiences prominent gain for experimentally accessible currents on the order of mAμm−1. Furthermore, the group velocity of the plasmon found from the isofrequency curves imply that the amplified plasmons are highly collimated along a direction perpendicular to the Dirac node tilt when the electrical current is applied along it. Here, the authors predict that plasmons in two-dimensional materials with closely located electron and hole Fermi pockets can be amplified when an electrical current bias is applied along the displaced electron-hole pockets, without the need for an external gain medium.
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