Generalized splitting of dislocations
Generalized splitting of dislocations
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DOI：
10.1080/14786436908217784
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发表时间：
1969-02
影响因子：
1.6
通讯作者：
V. Vítek;F. Kroupa
中科院分区：
文献类型：
--
作者：
V. Vítek;F. Kroupa
通过假定位错的离解过程中可以出现广义的本征层错，即不稳定的无限平面缺陷，从而推广了位错分裂的概念。因此，分项的Burgers矢不仅是基于晶格的几何定义的，而是由广义层错的能量对位移向量f的依赖来确定的，即由γ表面(Vitek 1968)确定。详细讨论了FCC中{111}晶面的广义分裂。晶体和BC.C.中的{110}和{112}面。水晶。
Abstract The concept of splitting of dislocations in generalized by the assumption that generalized intrinsic stacking faults, i.e. faults which are unstable as infinite planar defects, can occur in the dissociation of dislocations. The Burgers vectors of the partials are then not defined on the basis of the geometry of the lattice only, but are determined by the dependence of the energy of the generalized stacking fault on the displacement vector f, i.e. by the γ surface (Vitek 1968). The generalized splittings are discussed in detail for {111} planes in f.c.c. crystals and for {110} as well as {112} planes in b.c.c. crystals.