Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization
Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization
复制标题
DOI：
10.1021/acsami.3c15191
复制
发表时间：
2024-01-09
影响因子：
9.5
通讯作者：
Du，Yi
中科院分区：
文献类型：
--
作者：
Du，Kunrong;Meng，Ziyuan;Du，Yi
精确控制二维双极性半导体的载流子类型和密度是其在下一代集成电路和电子器件中应用的先决条件。通过在二维双极性半导体（氢化锗烯，GeH）和铁电衬底（PbMg1/3Nb2/3O3-PbTiO3, PMN-PT）之间制造异质界面，实现了GeH载流子类型和密度的微调。由于GeH的双极性特性、适当的带隙和高载流子迁移率，通过施加相反的局部偏压（±8 V）， GeH中的横向极化的功函数变化为0.6 eV。此外，GeH纳米片的内置极化可以促进光激发电子-空穴对的分离，从而使极化200 V后的光导率提高4倍。此外，通过调节衬底的局部极化，GeH的功函数从4.94 eV梯度调节到5.21 eV，可以通过形成p-n同质结用于微米尺度的数据存储。构建这种异质界面的工作为二维双极性半导体在非易失性存储器件、光电子器件和下一代集成电路中的应用提供了一条途径。
Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3–PbTiO3, PMN–PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron–hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p–n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit.