Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
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DOI:
10.1063/1.1943489
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发表时间:
2005-05-30
影响因子:
4
通讯作者:
Jiang, HX
中科院分区:
文献类型:
--
作者:
Nam, KB;Nakarmi, ML;Jiang, HX
Deep ultraviolet (UV) photoluminescence (PL) spectroscopy has been employed to study deep impurity transitions in AlxGa1-xN (0