Anomalous dewetting growth of Si on Ag(111)
Anomalous dewetting growth of Si on Ag(111)
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DOI：
10.1039/d2nr03409c
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发表时间：
2022-09-16
期刊：
影响因子：
6.7
通讯作者：
Lin, Chun-Liang
中科院分区：
文献类型：
--
作者：
Kawakami, Naoya;Arafune, Ryuichi;Lin, Chun-Liang
利用STM研究了硅烯在Ag（111）衬底上的生长，并利用KMC模拟揭示了硅烯在Ag（111）衬底上生长的机理。我们的STM研究表明，在第一层硅烯完全形成后，它被转化为体硅与裸露的银表面的再现。外延生长期间的这种去湿（DW）是常规生长行为中的例外。我们的KMC模拟再现DW考虑到银，硅烯，体硅上的Si原子的活化能的差异。生长模式的变化取决于扩散的活化能，温度和沉积速率，突出了生长亚稳态2D材料的动力学的重要性。
We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.