Influence of cooling rate on ferroelastic domain structure for epitaxial (100)/(001)-oriented Pb(Zr, Ti)O3 thin films under tensile strain
Influence of cooling rate on ferroelastic domain structure for epitaxial (100)/(001)-oriented Pb(Zr, Ti)O3 thin films under tensile strain
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DOI：
10.35848/1347-4065/ac10f7
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发表时间：
2021
影响因子：
1.5
通讯作者：
Yoshitaka Ehara;Daichi Ichinose;M. Kodera;T. Shiraishi;Takao Shimizu;Tomoaki Yamada;K. Nishida;H. Funakubo
中科院分区：
文献类型：
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作者：
Yoshitaka Ehara;Daichi Ichinose;M. Kodera;T. Shiraishi;Takao Shimizu;Tomoaki Yamada;K. Nishida;H. Funakubo
采用脉冲金属有机化学气相沉积法在（100）KTaO 3单晶衬底上生长了（100）/（001）取向的Pb（Zr x Ti 1 −x）O3 [PZT]薄膜。研究了冷却条件对压应变和拉应变下PZT薄膜铁弹畴结构的影响。在压缩应变下，冷却速率对c-畴分数（Vc）的影响不大。另一方面，改变冷却速率引起了显着的变化，在拉伸应变下生长的PZT薄膜中的Vc。此外，在低于居里温度的一定温度下的后退火步骤促进了α 1/α 2-畴中的c-畴的形成。这些结果表明，需要有效的时间在α 1/α 2-域中的c-域的形成，这是由生长动力学。拉伸应力下的铁弹畴结构由生长动力学决定，而缓慢的冷却速率导致结晶稳定的畴结构。
Epitaxial (100)/(001)-oriented Pb(Zr x Ti1−x )O3 [PZT] films were grown at 700 °C on (100)KTaO3 single crystal substrates by pulsed metalorganic chemical vapor deposition. We investigated the influence of the cooling condition on the ferroelastic domain structure for PZT films under compressive and tensile strains. Under compressive strain, the c-domain fraction (V c ) was not strongly influenced by the cooling rate. On the other hand, changing the cooling rate caused a significant change in V c in the PZT films grown under tensile strain. In addition, a post-annealing step at a certain temperature below the Curie temperature promoted the formation of a c-domain in the a 1/a 2-domain. These results indicate the need to effectively time the formation of the c-domain in the a 1/a 2-domain, which is governed by the growth kinetics. The ferroelastic domain structure under tensile stress is determined by the growth kinetics, while a slow cooling rate leads to a thermodynamically stable domain structure.