Low-energy X-ray performance of SOI pixel sensors for astronomy, “XRPIX”
Low-energy X-ray performance of SOI pixel sensors for astronomy, “XRPIX”
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天文学用 SOI 像素传感器“XRPIX”的低能 X 射线性能
DOI：
10.1016/j.nima.2020.164745
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发表时间：
2021
期刊：
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et al.
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作者：
Kodama Ryota;Ayaki Takeda;et al.
我们一直在开发一种新型的x射线像素传感器“XRPIX”，使我们能够为未来的日本x射线卫星“FORCE”进行1-20 keV宽波段的成像光谱。XRPIX器件采用互补金属氧化物半导体绝缘体硅技术制造，并具有“事件驱动读出模式”，其中仅使用每个像素配备的触发输出功能的命中信息读出命中事件。本文报道了PDD结构“XRPIX6E”器件的低能x射线性能。PDD结构特别降低了读出噪声，因此有望在很大程度上提高低能x射线的量子效率。而在0处的FK x射线。68 keV和Al-K x射线在1。在“帧读出模式”下，在不使用触发输出功能的情况下，所有像素被串行读出，设备能够检测Al-K x射线，但在事件驱动读出模式下不能检测FK x射线。在事件驱动读出模式下，在Al-K x射线的计数图中观察到不均匀性，这是由于比较器电路输入端的基座电压的区域到区域的变化。可用的最低阈值能量为1。1 keV用于器件中不均匀性最小化的小区域。感应节点电荷敏感放大器的噪声和与触发输出函数相关的噪声分别为~ 18 e−(rms)和~ 13 e−(rms)。
We have been developing a new type of X-ray pixel sensors,“XRPIX”, allowing us to perform imaging spectroscopy in the wide energy band of 1–20 keV for the future Japanese X-ray satellite “FORCE”. The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the “Event-Driven readout mode”, in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the “XRPIX6E” device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While FK X-rays at 0. 68 keV and Al-K X-rays at 1. 5 keV are successfully detected in the “Frame readout mode”, in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not FK X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1. 1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are∼ 18 e−(rms) and∼ 13 e−(rms), respectively.