Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh d$textit{i}$/d$textit{t}$ Condition
Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh d$textit{i}$/d$textit{t}$ Condition
复制标题
脉冲功率晶闸管型器件超高d$textit{i}$/d$textit{t}$条件下瞬态开通特性研究
DOI：
10.1109/ted.2022.3232320
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发表时间：
2023
影响因子：
3.1
通讯作者：
Bo Zhang
中科院分区：
文献类型：
--
作者：
Chao Liu;Pengcheng Xing;Shuyi Zhang;Wanjun Chen;Ruize Sun;Xiaorui Xu;Yun Xia;Yajie Xin;Yijun Shi;Zhaoji Li;Bo Zhang
特别优化的晶闸管型器件具有快速导通和高性能，在脉冲电源应用中具有广阔的前景。本文首先研究了mos门触发和电流门触发晶闸管型器件在超高条件下的瞬态导通特性。考虑瞬态电场在短脉冲持续时间内的影响，对注入电荷输运过程进行了理论分析和建模，从而清楚地揭示了mos门触发和电流门触发晶闸管型器件在瞬态导通特性上的差异。通过TCAD仿真和实验测量验证了瞬态导通过程。理论、仿真和实验结果表明，mos门触发晶闸管比电流门触发晶闸管具有更好的导通特性，这是由于mos门触发晶闸管的导通阶跃减小，导通调制能力增强。这项工作有助于进一步优化晶闸管型器件，实现快速导通和高性能。
Specially optimized thyristor-type devices for fast turn-on and highcapability are promising in pulse power applications. In this work, the transient turn-on characteristics of MOS-gate triggered and current-gate triggered thyristor-type devices operating at ultrahighconditions are first studied. The injected charge transport process is theoretically analyzed and modeled by considering the effect of the transient electric field, during short pulse duration, which then clearly reveals the difference between the MOS-gate triggered and current-gate triggered thyristor-type devices on the transient turn-on characteristics. TCAD simulations and experimental measurements are carried out to verify the transient turn-on process. The theoretical, simulated, and experimental results show that the MOS-gate triggered thyristor has better turn-on characteristics than the current-gate triggered thyristor, which attributes to the reduced turn-on step and consequently stronger conductivity modulation. This work helps further optimization of thyristor-type devices achieving fast turn-on and high-capability.