Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.
Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.
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DOI：
10.1038/srep29500
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发表时间：
2016-07-07
影响因子：
4.6
通讯作者：
Fujioka H
中科院分区：
文献类型：
--
作者：
Itoh T;Kobayashi A;Ueno K;Ohta J;Fujioka H
我们报告的第一个示范操作InGaN为基础的薄膜晶体管（TFT）的玻璃基板上。我们成功的关键是在玻璃衬底上涂覆一层薄的HfO 2非晶层，这使得使用脉冲溅射沉积的InGaN薄膜能够高度c轴取向生长。薄膜的电特性容易通过改变其In含量来控制。优化后的InGaN-TFT显示出~108的高开/关比、~22 cm 2 V−1 s−1的场效应迁移率和~30 mA/mm的最大电流密度。这些结果为开发使用III族氮化物半导体的玻璃基板上的高性能电子器件奠定了基础。
We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~108, a field-effect mobility of ~22 cm2 V−1 s−1, and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.