RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES
RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES
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DOI：
10.1103/physrev.96.1226
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发表时间：
1954-01-01
期刊：
影响因子：
--
通讯作者：
GLIESSMAN, JR
中科院分区：
文献类型：
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作者：
HUNG, CS;GLIESSMAN, JR
本文报道了从室温到液氦温度范围内锗合金的霍耳效应和电阻率的实验研究。采用不同杂质种类和不同浓度的锗样品。在较高温度下，理论与实验符合得很好，杂质态的激活能为10毫伏量级。载流子在导带和填充带中的散射主要包括晶格散射和电离杂质散射。然而，在低温下，观察到霍尔曲线的异常。随着温度的降低，所测量的每个样品的霍尔曲线经历最大值。同时，电阻率接近饱和值。低电阻率样品的霍尔曲线在很低的温度下最终变得平坦。这些异常现象可以在杂质态载流子迁移率小但有限的假设下得到解释。当导带中的载流子浓度变得非常低时，这种杂质态的传导在低温下具有重要性。当考虑这种导带和杂质带同时导电时，霍尔曲线和电阻率曲线中的行为得到了满意的解释。杂质带的迁移率随杂质浓度的增加而增加，但与温度无关。
An experimental investigation of the Hall effect and the resistivity of germanium alloys at temperatures from room temperature down to the liquid helium temperature range is reported. Germanium samples with different kinds of impurity and different concentrations were used. At higher temperatures, satisfactory agreement between theory and experiment was found. The activation energy of the impurity states was found to be of the order of 10 millivolts. The scattering of the carriers in the conduction and filled bands consists mainly of lattice scattering and ionized impurity scattering. At low temperatures, however, anomalies in the Hall curves were observed. The Hall curve for every sample measured went through a maximum as the temperature was lowered. At the same time the resistivity approached a saturation value. The Hall curves of low resistivity samples finally became flat at very low temperatures. These anomalies are explained on the assumption of small but finite mobility of carriers in the impurity states. This conduction in the impurity states assumes importance at low temperatures when the concentration of carriers in the conduction band becomes very low. When this simultaneous conduction in the conduction band and the impurity band is considered, the behaviors in the Hall and the resistivity curves are satisfactorily explained. The mobility in the impurity band is found to increase with the impurity concentration, but is rather temperature-independent.