High-Performance Silicon 2 x 2 Thermo-Optic Switch for the 2-mu m Wavelength Band
High-Performance Silicon 2 x 2 Thermo-Optic Switch for the 2-mu m Wavelength Band
复制标题
适用于 2μm 波长带的高性能硅 2 x 2 热光开关
DOI：
10.1109/jphot.2019.2921923
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发表时间：
2019
影响因子：
2.4
通讯作者：
Wang Jian
中科院分区：
文献类型：
--
作者：
Shen Li;Huang Meng;Zheng Shuang;Yang Lesi;Peng Xiangfeng;Cao Xiaoping;Li Shuhui;Wang Jian
2 μm光谱窗口是下一代通信的理想候选。提出了一种2 μm波段的2 × 2马赫-曾德尔干涉热光开关。该器件采用标准互补金属氧化物半导体（CMOS）工艺在220 nm厚的绝缘体上硅晶圆上制造。在32.3 mW的功耗下，平均开关时间为~15 μs，消光比超过30 dB。这一原理证明为实现2 μm波段全硅芯片级互连铺平了道路。
The 2-μm spectral window is emerging as a promising candidate for the next generation communication. We present a 2 × 2 Mach-Zehnder interferometric thermo-optic switch at 2-μm waveband. The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide semiconductor (CMOS) process. We demonstrate an over 30 dB extinction ratio under the power consumption of 32.3 mW, with an average switching time of ~15 μs. This proof of principle optical switch paves a way toward full silicon-based chip-scale interconnects in the 2-μm waveband.