Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip
Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip
复制标题
DOI：
10.1088/1674-4926/42/11/112802
复制
发表时间：
2021-11
影响因子：
5.1
通讯作者：
Xi Wang;Yiwen Zhong;H. Pu;Jichao Hu;Xianfeng Feng;Guowen Yang
中科院分区：
文献类型：
--
作者：
Xi Wang;Yiwen Zhong;H. Pu;Jichao Hu;Xianfeng Feng;Guowen Yang
研究了4 H-SiC肖特基势垒二极管（SBD）芯片中的横向电流扩展。模拟并制作了垂直参数相同的4 H-SiC SBD芯片。结果表明，对于特定的芯片，在导通状态下，电流扩展区存在一个固定的扩展电阻。在导通状态下，计算出所制造的芯片的线性比扩展电阻为8.6 Ω/cm。横向扩展电流占总正向电流的比例与阳极电压和芯片面积有关。在初始导通状态下，Psp随着阳极电压的增加而增加，然后趋于稳定值。两种芯片的Psp稳定值分别为32%和54%。结合理论分析，计算了终端区和划片槽在整个芯片中所占的比例（Ksp），并与Psp进行了比较，计算出两种芯片的Ksp值分别为31.94%和57.75%。在特定的芯片中，Ksp和Psp的值彼此接近。计算的Ksp可以用来预测，当SiC SBD的芯片面积变得大于0.5厘米2，Psp值将低于10%。
Lateral current spreading in the 4H-SiC Schottky barrier diode (SBD) chip is investigated. The 4H-SiC SBD chips with the same vertical parameters are simulated and fabricated. The results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific chip. The linear specific spreading resistance at the on-state is calculated to be 8.6 Ω/cm in the fabricated chips. The proportion of the lateral spreading current in total forward current (P sp) is related to anode voltage and the chip area. P sp is increased with the increase in the anode voltage during initial on-state and then tends to a stable value. The stable values of P sp of the two fabricated chips are 32% and 54%. Combined with theoretical analysis, the proportion of the terminal region and scribing trench in a whole chip (K sp) is also calculated and compared with P sp. The K sp values of the two fabricated chips are calculated to be 31.94% and 57.75%. The values of K sp and P sp are close with each other in a specific chip. The calculated K sp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2, the value of P sp would be lower than 10%.