Effect of medium vacuum on low temperature wafer bonding
Effect of medium vacuum on low temperature wafer bonding
复制标题
中真空对低温晶圆键合的影响
DOI：
10.1088/0960-1317/15/5/015
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发表时间：
2005
影响因子：
2.3
通讯作者：
G. Huang
中科院分区：
文献类型：
--
作者：
W. Yu;C. Tan;Jun Wei;Shu Sheng Deng;G. Huang
在中等真空条件下进行直接晶片键合。研究了硅片接触顺序、真空度、退火温度和退火时间对键合质量和键合速度的影响。从键合效率的比较来看，在空气中而不是在真空中接触两个晶片产生的气泡要少得多。对于真空键合，可以在低至300 ℃的温度下实现良好的键合，如高键合强度和高键合效率。从空气键合和中真空键合的比较中可以看出，中真空退火可以提高键合强度，加快键合过程。根据观测结果，提出了低温下中真空键合的定性机理。
Direct wafer bonding was performed under medium vacuum conditions. The effects of the sequence of wafer contact and vacuum application, annealing temperature, and annealing time on the bonding quality and bonding speed were investigated. From the comparison of the bonding efficiency, contacting two wafers in air rather than in vacuum produces much less bubbles. For vacuum bonding, good bonding, such as high bonding strength and high bonding efficiency, can be achieved at temperatures as low as 300 °C. From the comparison between air wafer bonding and medium vacuum wafer bonding, it is obvious that medium vacuum annealing can improve the bonding strength and accelerate the bonding process. Based on the results observed, a qualitative mechanism of medium vacuum wafer bonding at low temperatures was proposed.