Local thickness determination of thin insulator films via localized states
Local thickness determination of thin insulator films via localized states
复制标题
DOI：
10.1063/1.4883219
复制
发表时间：
2014-06-09
影响因子：
4
通讯作者：
Meyer, G.
中科院分区：
文献类型：
--
作者：
Steurer, W.;Gross, L.;Meyer, G.
我们建议用扫描隧道显微镜测量导带以下局域态的寿命来确定薄绝缘膜的局域厚度。寿命是薄膜厚度的特征指纹，它与近针尖-样品分离时通过局域态的隧道电流的饱和值成反比，并且很容易使用扫描隧道光谱进行测量。我们展示了在铜(111)衬底上生长5-11层厚的氯化钠薄膜的方法。(C)2014 AIP出版有限责任公司。
We propose measuring the lifetime of localized states below the conduction band to determine the local thickness of thin insulating films using scanning tunneling microscopy. The lifetime, which is a characteristic fingerprint of the film thickness, is inversely proportional to the saturation value of the tunnel current through the localized state at close tip-sample separation and is readily measured using scanning tunneling spectroscopy. We demonstrate the method for 5-11 monolayer thick NaCl films grown on Cu(111). (C) 2014 AIP Publishing LLC.