Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition.
Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition.
复制标题
增材光刻-有机单层图案化与区域选择性沉积相结合。
DOI：
10.1021/acsami.0c16817
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发表时间：
2021
影响因子：
9.5
通讯作者：
P. Naulleau
中科院分区：
文献类型：
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作者：
R. Wojtecki;Jonathan H. Ma;I. Cordova;N. Arellano;K. Lionti;T. Magbitang;Thomas G. Pattison;Xiao Zhao;E. Delenia;N. Lanzillo;Alexander E. Hess;N. F. Nathel;Holt P. Bui;C. Rettner;G. Wallraff;P. Naulleau
区域选择性沉积（ASD）与可图案化有机单层的组合提供了通用的增材光刻平台，使得能够生成各种纳米级特征几何形状。用极紫外（λ = 13.5 nm）或电子束照射对硬脂酸异羟肟酸自组装单分子膜（SAMs）进行了图案化，并用ASD显影，获得了小至50 nm的线间距图案。利用密度泛函理论合成了具有最佳堆积密度的异羟肟酸衍生物，以提高成像对比度和剂量敏感性。近边缘X射线吸收精细结构光谱和红外光谱显示，成像机制是基于由SAM的交联提供的改善的沉积抑制，以在随后的沉积步骤期间产生更有效的屏障。与图案化的基板组成的共面铜线和硅间隔，异羟肟酸选择性地形成单层的金属部分，并可以经历一个图案化的曝光，然后ASD在第一个组合的可图案化的单层与ASD。与通常反映起始图案化表面的传统ASD方法相比，该材料系统呈现额外的能力。此外，这种自下而上的添加剂的光刻方法可能是一个可行的替代减法纳米级特征生成。
The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self-assembled monolayers (SAMs) were patterned with extreme ultraviolet (λ = 13.5 nm) or electron beam irradiation and developed with ASD to achieve line space patterns as small as 50 nm. Density functional theory was employed to aid in the synthesis of hydroxamic acid derivatives with optimized packing density to enhance the imaging contrast and improve dose sensitivity. Near-edge X-ray absorption fine structure spectroscopy and infrared spectroscopy reveal that the imaging mechanism is based on improved deposition inhibition provided by the cross-linking of the SAM to produce a more effective barrier during a subsequent deposition step. With patterned substrates composed of coplanar copper lines and silicon spacers, hydroxamic acids selectively formed monolayers on the metal portions and could undergo a pattern-wise exposure followed by ASD in the first combination of a patternable monolayer with ASD. This material system presents an additional capability compared to traditional ASD approaches that generally reflect a starting patterned surface. Furthermore, this bottoms-up additive approach to lithography may be a viable alternative to subtractive nanoscale feature generation.