Excitonic transitions in ZnO/MgZnO quantum well heterostructures
Excitonic transitions in ZnO/MgZnO quantum well heterostructures
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DOI：
10.1063/1.1370116
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发表时间：
2001-05-07
影响因子：
4
通讯作者：
Bajaj, KK
中科院分区：
文献类型：
--
作者：
Coli, G;Bajaj, KK
在这项工作中，我们提出了在ZnO/MgZnO量子阱异质结构的激子跃迁能量的计算，占激子-声子相互作用的影响。我们的计算结果清楚地表明，描述的电子-空穴相互作用的静态屏蔽库仑势的装置和使用的极化子质量的电子和空穴导致与现有的实验数据不一致。另一方面，包括激子-声子相互作用的激子结合能的计算中，导致激子跃迁的值与最近发表的实验数据非常吻合。对ZnO中所用物理参数的选择也进行了严格的讨论，这使我们提出了重空穴带质量为0.78m（0）和导价带比在60/40-70/30范围内的值。(C)2001年美国物理学会。
In this work we present the calculation of the excitonic transition energies in ZnO/MgZnO quantum well heterostructures, accounting for the effects of the exciton-phonon interaction. The results of our calculations clearly show that the description of the electron-hole interaction by means of the static screened Coulomb potential and the use of the polaron masses for the electron and the hole leads to a poor agreement with available experimental data. On the other hand, including the exciton-phonon interaction in the calculation of the exciton binding energies, leads to the values of the excitonic transitions which agree very well with the recently published experimental data. A critical discussion of the choice of the physical parameters used in ZnO is also presented, which leads us to suggest a value for the heavy-hole band mass of 0.78m(0) and a conduction-valence band ratio in the range 60/40-70/30. (C) 2001 American Institute of Physics.