Toward Nanowire Electronics
Toward Nanowire Electronics
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DOI：
10.1109/ted.2008.2008011
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发表时间：
2008-11-01
影响因子：
3.1
通讯作者：
Riess, Walter
中科院分区：
文献类型：
--
作者：
Appenzeller, Joerg;Knoch, Joachim;Riess, Walter
本文讨论了纳米线场效应晶体管（NW-FET）的电子输运特性。详细研究了四种不同的器件概念：具有金属源极和漏极接触的肖特基势垒NW-FET，具有掺杂NW段作为源极和漏极的常规型NW-FET，以及最后，两种新概念，即NW碰撞电离FET和隧道NW-FET，其能够实现陡峭的导通特性。事实证明，NW-FET在很大程度上取决于器件的几何形状、电子传输的维度以及与NW接触的方式。分析以及模拟结果与实验数据进行了比较，以解释影响NW-FET中电子输运的各种因素。
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.