Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route
Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route
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通过 CVD 途径热解聚合物前驱体合成大面积厘米长 SiC 纳米线
DOI：
10.1021/jp904277f
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发表时间：
2009-10-15
影响因子：
3.7
通讯作者：
Cho, Ren-chao
中科院分区：
文献类型：
--
作者：
Li, Gong-yi;Li, Xiao-dong;Cho, Ren-chao
以二茂铁为催化剂，采用化学气相沉积法（CVD）热解聚合物前驱体，制备了大面积厘米长的SiC纳米线。纳米线由单晶β-SiC沿着111 nm方向组成，长度为几厘米，直径为100-200 nm，生长在陶瓷衬底上，面积为11 cm × 4 cm。在高温下，聚合物前体液体聚硅碳硅烷（l-PS）分解产生的硅烷碎片为纳米线的生长提供了Si和C来源。纳米线的生长在一个基础的增长模式，这是由汽-液-固机制。当施加脉冲高压电场时，SiC纳米线显示出良好的强电流发射特性。
Large areas of centimeters-long SiC nanowires have been prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The nanowires, with lengths of several centimeters and diameters of 100-200 nm, were composed of single-crystal � -SiC along the 〈111〉 direction and were grown on ceramic substrates in areas of 11 cm × 4 cm. At high temperature, the silane fragments derived from decomposition of the polymer precursor, liquid polysilacarbosilane (l-PS), provided both the Si and C sources for the growth of the nanowires. The nanowires grew in a base-growth mode, which was governed by the Vapor-Liquid-Solid mechanism. The SiC nanowires showed good intense-current emitting properties when a pulsed high-voltage electric field was imposed.