Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices
Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices
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DOI：
10.1063/1.3677266
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发表时间：
2012-04-01
影响因子：
3.2
通讯作者：
Ando, Yasuo
中科院分区：
文献类型：
--
作者：
Fujiwara, Kosuke;Oogane, Mikihiko;Ando, Yasuo
制备了具有Ni_（80）Fe_（20）/Ru/Co_（40）Fe_（40）B_（20）合成反铁磁耦合底部自由层和MgO阻挡层的磁性隧道结。为了获得无磁致伸缩电阻响应的磁场线性度，进行了双重退火工艺。研究了退火温度和自由层NiFe厚度对磁场传感器性能的影响。我们已经观察到非常高的灵敏度为25.3%/Oe，同时保持线性。(C)2012年美国物理学会。[doi 10.1063/1.3677266]
Magnetic tunnel junctions with a Ni80Fe20/Ru/Co40Fe40B20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3%/Oe while keeping linearity. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677266]