Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si
Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si
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(001)Si 超高真空沉积 Ti 薄膜非晶中间层硅化钛纳米晶的形成
DOI：
10.1063/1.1988977
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发表时间：
2005
影响因子：
3.2
通讯作者：
Lun
中科院分区：
文献类型：
--
作者：
T. Yang;K. Chi;Lun
在（001）Si衬底上制备的Ti薄膜经退火处理后，在非晶混合层中同时形成了Ti5Si3、Ti5Si4和TiSi等纳米Ti硅化物。自相关函数分析已被应用到高分辨率透射电子显微镜图像，以确定在反应的初始阶段形成的相。由于在非晶层中检测纳米晶体的上级灵敏度，检测到中间硅化物相的形成早于先前的研究。从所构造的亚稳自由能图可以解释该相的形成。
A number of nanosize Ti silicides, Ti5Si3,Ti5Si4, and TiSi, were found to form simultaneously in the amorphous intermixing layer of annealed ultrahigh-vacuum-deposited Ti thin films on (001)Si. Autocorrelation function analysis has been applied to the high-resolution transmission electron microscope images to identify the phases formed in the initial stages of reaction. The intermediate silicide phases were detected to form earlier than that of the previous study owing to the superior sensitivity in detecting nanocrystals in an amorphous layer. The phase formation can be explained from the constructed metastable free-energy diagram.