Synthesis of bandgap-controlled semiconducting single-walled carbon nanotubes.
Synthesis of bandgap-controlled semiconducting single-walled carbon nanotubes.
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DOI：
10.1021/nn901135b
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发表时间：
2010-01
期刊：
影响因子：
17.1
通讯作者：
Wooseok Song;C. Jeon;Yooseok Kim;Young Taek Kwon;D. Jung;S. Jang;W. Choi;Jin Sung Park;R. Saito-R.-S
中科院分区：
文献类型：
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作者：
Wooseok Song;C. Jeon;Yooseok Kim;Young Taek Kwon;D. Jung;S. Jang;W. Choi;Jin Sung Park;R. Saito-R.-S
采用独特设计的催化层（Al₂O₃/Fe/Al₂O₃）和常规热化学气相沉积法合成了带隙可控的半导体单壁碳纳米管（s - SWNTs）。在Al₂O₃层上制备了尺寸均匀的Fe催化纳米颗粒，通过在800℃下热驱动扩散以及随后Fe的蒸发来简单调节退火时间，从而控制其尺寸。透射电子显微镜和拉曼光谱表明，随着退火时间的增加，合成的单壁碳纳米管直径从1.4 nm调控到0.8 nm，且直径分布极窄，小于0.1 nm。结果，半导体单壁碳纳米管的带隙成功地从0.53 eV控制到0.83 eV，能量分布足够窄，可应用于基于单壁碳纳米管的场效应晶体管。
Bandgap-controlled semiconducting single-walled carbon nanotubes (s-SWNTs) were synthesized using a uniquely designed catalytic layer (Al(2)O(3)/Fe/Al(2)O(3)) and conventional thermal chemical vapor deposition. Homogeneously sized Fe catalytic nanoparticles were prepared on the Al(2)O(3) layer and their sizes were controlled by simply modulating the annealing time via heat-driven diffusion and subsequent evaporation of Fe at 800 degrees C. Transmission electron microscopy and Raman spectroscopy revealed that the synthesized SWNTs diameter was manipulated from 1.4 to 0.8 nm with an extremely narrow diameter distribution below 0.1 nm as the annealing time is increased. As a result, the bandgap of semiconducting SWNTs was successfully controlled, ranging from 0.53 to 0.83 eV, with a sufficiently narrow energy distribution, which can be applied to field-effect transistors based on SWNTs.