Correlation of coercivity and microstructure of thin CoFe films
Correlation of coercivity and microstructure of thin CoFe films
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DOI：
10.1063/1.1305833
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发表时间：
2000-08-15
影响因子：
3.2
通讯作者：
McCartney, MR
中科院分区：
文献类型：
--
作者：
Platt, CL;Berkowitz, AE;McCartney, MR
研究了溅射Co_（50）Fe_（50）（CoFe）薄膜的磁性和结构特性。在室温下沉积在Si衬底上的300埃厚的CoFe膜显示出140 Oe的大矫顽场。当在100 ℃下沉积类似厚度的膜时，矫顽场下降到90 Oe，当它们沉积在CoO上时，电导率降低到12 Oe。透射电子显微镜的截面成像显示CoO底层在CoFe中诱导了柱状晶粒结构，粒径范围为50 - 150埃。在Si上生长的CoFe薄膜含有直径为200-350埃的较大晶粒，具有较少的明显垂直晶界。洛伦兹显微镜表明，在硬CoFe膜的畴壁形成复杂的，固定的模式，在小于磁场的CoFe/CoO样品，而墙更保形和移动的响应变化的领域。不同的衬底，沉积温度和厚度的CoFe膜获得的bavity的广泛变化的可能的结构起源进行了讨论。(C)2000年美国物理学会。【S0021-8979（00）02716-X】。
The magnetic and structural properties of sputtered Co50Fe50(CoFe) films were examined. CoFe films 300 Angstrom thick deposited on Si substrates at room temperature showed large coercive fields of 140 Oe. When similar thickness films were deposited at 100 degrees C, the coercivity dropped to 90 Oe, and when they were deposited on CoO, the coercivity was reduced to 12 Oe. Cross-sectional imaging with transmission electron microscopy revealed that the CoO underlayer had induced a columnar grain structure in the CoFe, with grain diameters ranging from 50 to 150 Angstrom. CoFe films grown on Si contained larger grains of 200-350 Angstrom in diameter with fewer distinct vertical grain boundaries. Lorentz microscopy showed that domain walls in the hard CoFe film formed complex, fixed patterns in fields less than the coercivity, whereas walls in the CoFe/CoO sample were more conformal and mobile in response to changing fields. Possible structural origins for the wide variation in coercivity obtained with different substrates, deposition temperature, and thickness of CoFe films are discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)02716-X].