Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
复制标题
4H相SiC空穴引发碰撞电离的蒙特卡罗计算
DOI：
10.1063/1.372426
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
R. Trew
中科院分区：
文献类型：
--
作者：
E. Bellotti;H. Nilsson;K. Brennan;P. Ruden;R. Trew
在本文中，我们对碳化硅（4H- sic） 4H相的高场、空穴输运性质进行了全面的全波段理论研究。计算使用全波段集合蒙特卡罗模拟，包括数值表化的冲击电离率，声子和电离杂质散射率。此外，模拟还包括带间隧道机制，通过该机制，孔可以在带交叉点附近的带间移动。在平行和垂直于c轴方向的场中，计算得到的稳态空穴漂移速度存在显著的各向异性。如果模型中考虑了在带交叉点附近的带间隧道效应，则该模型与沿c轴施加的场的空穴引发的冲击电离系数的实验测量结果吻合良好。如果不考虑带间隧道作用，计算得到的电离系数为…
In this article, we present a comprehensive, full band theoretical study of the high field, hole transport properties of the 4H phase of silicon carbide (4H-SiC). The calculations are performed using a full band ensemble Monte Carlo simulation that includes numerically tabulated impact ionization rates, and phonon and ionized impurity scattering rates. In addition, the simulation includes a mechanism, interband tunneling, by which the holes can move between bands in the proximity of band intersection points. It is found that there exists a significant anisotropy in the calculated steady-state hole drift velocity for fields applied parallel and perpendicular to the c-axis direction. Good agreement with experimental measurements of the hole initiated impact ionization coefficient for fields applied along the c axis is obtained, provided that interband tunneling in the proximity of band intersections is included in the model. If interband tunneling is not included, the calculated ionization coefficients are ...