Individual charge-trapping dislocations in an ionic insulator
Individual charge-trapping dislocations in an ionic insulator
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离子绝缘体中的单个电荷捕获位错
DOI：
10.1063/1.3259778
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发表时间：
2009
影响因子：
4
通讯作者：
Y. Ikuhara
中科院分区：
文献类型：
--
作者：
Zhongchang Wang;S. Tsukimoto;M. Saito;Y. Ikuhara
绝缘氧化物材料发现广泛的技术应用，其中已知它们的内部位错行为如何影响或控制性能。在这里，我们证明，通过第一性原理计算MgO，个别位错可以捕获在其核心周围的空的空间内的电荷在一个不寻常的管道状的方式，无论是否通过外部激发或杂质掺杂产生的电荷。位错的这种效应对许多应用物理问题都是至关重要的，同时也为探索基于受限电荷的功能器件开辟了一条途径。
Insulating oxide materials find widespread technological applications where how their inside dislocations behave are known to influence or control performance. Here we demonstrate, by first-principles calculations on MgO, that individual dislocations can trap charges within empty space around their cores in an unusual pipelike way, regardless of whether the charges are produced via external excitation or impurity doping. Such effect of dislocations is crucial for many applied physics issues as well as opens up an avenue for exploring functional devices based on the confined charges.