Imprint in Ferroelectric Capacitors
Imprint in Ferroelectric Capacitors
复制标题
DOI：
10.1143/jjap.35.1521
复制
发表时间：
1996-02
影响因子：
1.5
通讯作者：
W. L. Warren;B. Tuttle;D. Dimos;G. Pike;H. Alshareef;R. Ramesh;J. Evans;J. Jr.
中科院分区：
文献类型：
--
作者：
W. L. Warren;B. Tuttle;D. Dimos;G. Pike;H. Alshareef;R. Ramesh;J. Evans;J. Jr.
我们表明，Pb(Zr, Ti)O3 电容器的极化电压特性中的电压偏移可能会导致铁电存储器件中出现印记。热引起的电压变化（内部偏置场）部分归因于整个薄膜中与氧空位相关的缺陷偶极子的作用。为了支持这一点，我们发现 Ti(Zr) 位点的施主掺杂减少了热感应电压漂移。发现应力引起的电压变化取决于 Zr/Ti 阳离子比率。这种成分依赖性可以通过考虑深层 Ti3+ 中心的作用和/或成分依赖性氧空位密度来解释。
We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.