Quantum memory using a hybrid circuit with flux qubits and nitrogen-vacancy centers
Quantum memory using a hybrid circuit with flux qubits and nitrogen-vacancy centers
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DOI：
10.1103/physreva.88.012329
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发表时间：
2013-01
影响因子：
2.9
通讯作者：
Xin-you Lu;Z. Xiang;W. Cui;J. You;F. Nori
中科院分区：
文献类型：
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作者：
Xin-you Lu;Z. Xiang;W. Cui;J. You;F. Nori
我们提出了一种混合量子结构，包括两个耦合通量量子比特和一个氮空位中心系综（NVE），以实现高保真量子存储。其中一个通量量子位作为量子计算处理器，NVE作为量子存储器。通过将计算单元和存储单元分离，可以有效消除量子计算过程对量子存储器的影响，从而实现计算量子位任意量子态的高保真量子存储。此外，该方法对系统参数的波动具有较强的鲁棒性，在现有技术条件下在实验上是可行的。
We propose how to realize high-fidelity quantum storage using a hybrid quantum architecture including two coupled flux qubits and a nitrogen-vacancy center ensemble (NVE). One of the flux qubits is considered as the quantum computing processor and the NVE serves as the quantum memory. By separating the computing and memory units, the influence of the quantum computing process on the quantum memory can be effectively eliminated, and hence the quantum storage of an arbitrary quantum state of the computing qubit could be achieved with high fidelity. Furthermore the present proposal is robust with respect to fluctuations of the system parameters, and it is experimentally feasibile with currently available technology.