Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
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DOI：
10.1016/j.solmat.2012.12.025
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发表时间：
2013-04
影响因子：
6.9
通讯作者：
Z. Deng;Rongxin Wang;J. Ning;C. Zheng;W. Bao;Shijie Xu;Xiao-li Zhang;Shulong Lu;J. Dong
中科院分区：
文献类型：
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作者：
Z. Deng;Rongxin Wang;J. Ning;C. Zheng;W. Bao;Shijie Xu;Xiao-li Zhang;Shulong Lu;J. Dong
利用室温电致发光（EL）和光致发光（PL）技术研究了两种GaxIn 1 −xP/GaAs双结叠层太阳电池结构中载流子的辐射复合。在两个样品的顶部和底部子电池中同时观察到有效的辐射复合。通过对EL和PL谱的研究，发现发光复合强度Φ EL与材料的发光复合系数、基区掺杂浓度和基区厚度有关。此外，两种子电池中Φ EL与衬底取向差的关系也得到了证实，这可以用GaInP顶电池的微结构和GaAs底电池的p-n结势垒分布的生长诱导变化来解释。基于这些观察，子电池的两个基极层中的辐射复合被证明是GaxIn 1 −xP/GaAs双结串联光伏器件中的主要载流子损耗机制，应该被抑制。
Radiative recombination of carriers in two kinds of GaxIn1−xP/GaAs double-junction tandem solar cell structures was investigated by using room-temperature electroluminescence (EL) and photoluminescence (PL) techniques. Efficient radiative recombination was observed simultaneously in the top and the bottom subcells in both the samples. By studying the behavior of EL and PL spectra, the radiative recombination intensity ΦELwas demonstrated to be reliant on the material-dependent radiative recombination coefficient, base layer doping concentration and thickness. Furthermore, dependence of ΦELon substrate misorientation in both the subcells was also evidenced, which was explained in terms of the growth-induced variations in microstructure for the GaInP top cell and in potential barrier profile across the p–n junction for the GaAs bottom cell. Based on these observations, the radiative recombination in the two base layers of the subcells was demonstrated to be the major carrier loss mechanism in the GaxIn1−xP/GaAs double-junction tandem photovoltaic devices and should be suppressed.