Recombination in Passivating Contacts: Investigation Into the Impact of the Contact Work Function on the Obtained Passivation
Recombination in Passivating Contacts: Investigation Into the Impact of the Contact Work Function on the Obtained Passivation
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钝化接触中的重组：研究接触功函数对获得的钝化的影响
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Le A
改善硅太阳能电池中触点的钝化是实现高效率器件的关键。本文采用一种新方法——准稳态光致发光，对接触功函数对钝化效果的影响进行了检验和量化，该方法提供了金属化后表面饱和电流密度（J0s,m）的途径。所获得的j0表明，当高功函数触点应用于用氧化铝钝化的硅晶片上时，无论晶片掺杂类型如何，表面钝化效果都有所改善。这种改进主要是由于硅界面附近的电子和空穴浓度之间的不平衡被放大。当使用低功函数的触点时，通过电荷辅助载流子数量控制来增加复合率，从而降低了钝化质量。本文指出了在高效太阳能电池中选择合适的金属以减少接触复合的重要性。
Improving the passivation of contacts in silicon solar cells is crucial for reaching high‐efficiency devices. Herein, the impact of the contact work function on the obtained passivation is examined and quantified using a novel method—quasi‐steady‐state photoluminescence—which provides access to the surface saturation current density after metallization (J0s,m). The obtainedJ0s,mindicates an improvement of the surface passivation when contacts with high work function are applied onto Si wafers passivated with aluminum oxide, regardless of the wafer doping type. This improvement is mainly due to the amplification of the imbalance between the electron and hole concentrations near the Si interface. The passivation quality is reduced when using contacts with low work function in which the recombination rate increases via the charge‐assisted carrier population control. Herein, the vital importance of selecting suitable metals to minimize contact recombination in high‐efficiency solar cells is pointed.