Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms
Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms
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使用聚酰亚胺隔膜选择性沉积 GaAs 材料的可对准外延剥离
DOI：
10.1109/68.118028
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发表时间：
1991
影响因子：
2.6
通讯作者：
Mark G. Allen
中科院分区：
文献类型：
--
作者：
C. Camperi;M. Hargis;N. Jokerst;Mark G. Allen
作者报告了将图案化薄膜外延 GaAs/GaAlAs 器件选择性且可对准地沉积到硅等主基板上，以实现低成本、可制造的混合集成光电电路。作者使用薄聚酰亚胺隔膜作为这些图案化外延器件的透明传输介质。然后，聚酰亚胺上的这些器件中的每一个或这些器件的组被光学对准并选择性地沉积到主基板上。使用聚酰亚胺传输隔膜还允许在基板支撑下处理器件的底部和顶部。使用该技术，在GaAs衬底上生长面积为50*50μm、厚度为2μm的发光二极管，剥离、对准并选择性沉积到硅主衬底上，并进行电接触和测试。<<ETX>>
The authors report the selective and alignable deposition of patterned thin-film epitaxial GaAs/GaAlAs devices onto a host substrate such as silicon for low cost, manufacturable hybrid integrated optoelectronic circuits. The authors use a thin polyimide diaphragm as the transparent transfer medium for these patterned epitaxial devices. Each of these devices or a group of these devices on the polyimide is then optically aligned and selectively deposited onto the host substrate. The use of the polyimide transfer diaphragm also allows both the bottom and the top of the device to be processed while under substrate support. Using this technique, a light emitting diode 50*50 mu m in area and 2 mu m thick was grown on a GaAs substrate, lifted off, aligned and selectively deposited onto a silicon host substrate, and electrically contacted and tested.<<ETX>>