Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping
Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping
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DOI：
10.1063/1.4865583
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发表时间：
2014-02-24
影响因子：
4
通讯作者：
Kuball, M.
中科院分区：
文献类型：
--
作者：
Pomeroy, J. W.;Bernardoni, M.;Kuball, M.
为了在基于 GaN 的晶体管中实现超高射频输出功率密度，必须开发新的热管理解决方案以实现高效的热量提取，包括使用高导热率基板。将 GaN 器件与现有最高导热率材料（金刚石，而不是标准 GaN-on-SiC）集成，可以大幅降低器件热阻。与同等 GaN-on-SiC 晶体管相比，当前的金刚石基 GaN 晶体管可将峰值沟道温度降低 40%，并且通过优化还有可能进一步降低。为了了解衬底和 GaN/衬底界面对器件热阻的影响，开发了 3D 拉曼热成像映射和建模方法。研究发现，GaN/金刚石界面热阻对当前金刚石基氮化镓器件的热阻贡献最大。 (C) 2014 AIP 出版有限责任公司。
In order to achieve ultra-high radio frequency output power densities in GaN-based transistors new thermal management solutions must be developed for efficient heat extraction, including the use of high thermal conductivity substrates. Integration of GaN devices with the highest thermal conductivity material available, diamond, instead of the standard GaN-on-SiC, can lead to a substantial reduction in device thermal resistance. Current GaN-on-diamond transistors are shown to result in a 40% reduction in peak channel temperature when benchmarked against equivalent GaN-on-SiC transistors, with the potential for even further reductions through optimization. In order to understand the contribution of substrate and GaN/substrate interface to the device thermal resistance, a 3D Raman thermography mapping and modelling approach has been developed. The GaN/diamond interface thermal resistance is found to have the largest contribution to the thermal resistance of current GaN-on-diamond devices. (C) 2014 AIP Publishing LLC.