Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
复制标题
DOI：
10.1143/apex.2.015004
复制
发表时间：
2009-01
影响因子：
2.3
通讯作者：
Chuanbo Li;K. Usami;G. Yamahata;Y. Tsuchiya;H. Mizuta;S. Oda
中科院分区：
文献类型：
--
作者：
Chuanbo Li;K. Usami;G. Yamahata;Y. Tsuchiya;H. Mizuta;S. Oda
采用低压化学气相沉积法在图案化的Au催化剂衬底上生长了位置可控的单根Ge纳米线阵列。透射电子显微镜和X射线衍射结果表明，Ge纳米线是单晶的金刚石结构。通过优化电子束光刻工艺，采用剥离法制备了直径为10 nm的Au图形。通过调节催化剂的位置可以精确控制Ge纳米线的生长，这为原位制备纳米线器件提供了可能。
A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate by low-pressure chemical vapor deposition. Both transmission electron microscope and X-ray diffraction results indicate that Ge nanowires are single crystalline with diamond structure. By optimizing the electron-beam lithography process, Au patterns with a diameter of 10 nm were prepared by lift-off method. The growth of Ge nanowires can be precisely controlled by adjusting the location of catalysts, which may offer the possibility of in situ fabrication of nanowire devices.