Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
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DOI：
10.1088/1674-4926/34/12/124004
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发表时间：
2013-12
影响因子：
5.1
通讯作者：
Liang Jing;H. Xiao;Xiaoliang Wang;Cuimei Wang;Qingwen Deng;Zhi-Da Li;Jieqin Ding;Zhan-guo Wang-Zhan-guo-Wa
中科院分区：
文献类型：
--
作者：
Liang Jing;H. Xiao;Xiaoliang Wang;Cuimei Wang;Qingwen Deng;Zhi-Da Li;Jieqin Ding;Zhan-guo Wang-Zhan-guo-Wa
本文研究了在图案化蓝宝石衬底(PSS)上生长的InGaN/GaN多量子阱太阳电池的性能。在PSS衬底上生长的太阳电池的短路电流密度(JSC)比在传统蓝宝石衬底上生长的太阳电池提高了60%。性能的改善主要是由于PSS的纹理表面的散射减少了边缘位错和增加了光吸收路径。结果表明，图案化蓝宝石技术可以有效缓解InGaN基太阳电池由于吸收层较薄而产生的高密度位错和低JSC的问题，有望提高太阳电池的效率。
In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates (PSS) was demonstrated. The short-circuit current (Jsc) density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell.