Radiation Effects on the Silicon Semiconductor Detectors for the ASTRO-H Mission
Radiation Effects on the Silicon Semiconductor Detectors for the ASTRO-H Mission
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DOI：
10.1016/j.nima.2012.05.088
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发表时间：
2013-01
影响因子：
1.4
通讯作者：
Katsuhiro Hayashi;I. Park;Kyohei Dotsu;I. Ueno;S. Nishino;M. Matsuoka;H. Yasuda;Y. Fukazawa;T. Ohsugi;T. Mizuno;H. Takahashi;M. Ohno;S. Endo;Takaaki Tanaka;H. Tajima;M. Kokubun;S. Watanabe;Tadayuki Takahashi;K. Nakazawa;Y. Uchihori;H. Kitamura
中科院分区：
文献类型：
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作者：
Katsuhiro Hayashi;I. Park;Kyohei Dotsu;I. Ueno;S. Nishino;M. Matsuoka;H. Yasuda;Y. Fukazawa;T. Ohsugi;T. Mizuno;H. Takahashi;M. Ohno;S. Endo;Takaaki Tanaka;H. Tajima;M. Kokubun;S. Watanabe;Tadayuki Takahashi;K. Nakazawa;Y. Uchihori;H. Kitamura
日本第6颗x射线卫星ASTRO-H上搭载的硬x射线成像仪（HXI）和软伽玛射线探测器（SGD）分别采用双面硅条探测器（DSSD）和像素阵列型硅传感器（Si-pad）。具有3.4cm×3.4cm面积的DSSD具有覆盖5-80keV的HXI较低能量带的成像能力。Si-pad由16×16像素与5.4cm×5.4cm面积和测量光子方向与康普顿运动学在10-600keV。由于ASTRO-H将在近地轨道上运行，这些探测器将主要受到南大西洋异常区的宇宙射线质子的照射而损坏。为了评估传感器的损伤效应，我们进行了150MeV质子束和60co伽马射线的辐照试验，总剂量为10-20年辐照水平。在这两个实验中，在- 15°C的预期工作温度下，泄漏电流增加了~ 0.2−−1.1nA/cm2，这导致噪声水平在20年的公差范围内。本文介绍了硅探测器的基本性能，并通过辐照试验对其辐射效应进行了综述。
Hard X-ray Imager (HXI) and Soft Gamma-ray Detector (SGD) onboard the 6th Japanese X-ray satellite, ASTRO–H, utilize double-sided silicon strip detectors (DSSD) and pixel array-type silicon sensors (Si-pad), respectively. The DSSD with a 3.4cm×3.4cm area has an imaging capability in the lower energy band for the HXI covering 5–80keV. The Si-pad consists of 16×16 pixels with a 5.4cm×5.4cm area and measures a photon direction with the Compton kinematics in 10–600keV. Since the ASTRO–H will be operated in a low earth orbit, these detectors will be damaged by irradiation of cosmic-ray protons mainly in the South Atlantic Anomaly. In order to evaluate damage effects of the sensors, we have carried out irradiation tests with 150MeV proton beams and60Co gamma-rays with a total dose of 10–20 years irradiation level. In both experiments, the leakage current has increased by ∼0.2−−1.1nA/cm2under an expected operation temperature at −15°C, which resulted in the noise level within a tolerance of 20 years. In this report, we present a summary of the basic performance of silicon detectors, and radiation effects on them by the irradiation tests.