Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
复制标题
使用连续波激光照射在玻璃上薄膜晶体管的预定义有源区域选择性单晶硅生长
DOI：
10.1143/jjap.42.23
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发表时间：
2003
影响因子：
1.5
通讯作者：
N. Sasaki
中科院分区：
文献类型：
--
作者：
A. Hara;K. Yoshino;F. Takeuchi;N. Sasaki
我们开发了一种新的硅（Si）结晶方法，该方法可以在无碱玻璃上的薄膜晶体管（TFT）的沟道区域中形成单晶Si，而不会引入热损伤。该方法包括使用倍频（2ω）二极管泵浦的固态（DPSS）Nd：YVO 4连续波（CW）激光器（λ=532 nm）。这种结晶方法的独特之处在于在预图案化的沟道区域上引入预定义的厚帽盖Si层，以及从背表面通过玻璃基板进行激光照射。我们成功地在TFT的沟道区域中形成了2 μ m宽和20 μ m长的单晶Si。使用450°C制造工艺在玻璃衬底上获得高性能n沟道TFT。TFT的场效应迁移率为400 cm 2/Vs，亚阈值摆幅为0.16 V/dec，阈值电压为0.24 V。
We have developed a new silicon (Si) crystallization method that makes it possible to form single-crystalline Si in the channel regions of thin-film transistors (TFTs) on non-alkali glass without introducing thermal damage. The method includes using a frequency-doubled (2ω) diode-pumped solid-state (DPSS) Nd:YVO4 continuous-wave (CW) laser (λ=532 nm). The unique characteristics of this crystallization method are the introduction of a pre-defined thick capping-Si layer on a pre-patterned channel region and laser irradiation from the back surface through the glass substrate. We succeeded in forming 2-µm-wide and 20-µm-long single-crystalline Si in the channel region of a TFT. A high-performance n-channel TFT on a glass substrate was obtained using a 450°C fabrication process. The TFT had a field-effect mobility of 400 cm2/Vs, a subthreshold swing of 0.16 V/dec, and a threshold voltage of 0.24 V.