Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells
Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells
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DOI：
10.1063/1.4737941
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发表时间：
2012-07
影响因子：
4
通讯作者：
T. Tahtamouni;Jingyu Lin;Hongxing Jiang
中科院分区：
文献类型：
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作者：
T. Tahtamouni;Jingyu Lin;Hongxing Jiang
利用光致发光（PL）谱研究了AlN/AlxGa 1-xN单量子阱威尔斯（x = 0.65）的光偏振特性。带边光致发光的主要偏振分量在阱宽约2nm处从E_（10）c转变为E_（10）c。随着阱宽的增加，E_（10）c的偏振态发射强度和偏振度均减小。随着阱宽的增加，E_（10）c的偏振发射强度增加。
The optical polarization of AlN/AlxGa1-xN single quantum wells (x = 0.65) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E ∥ c to E ⊥ c at a well width around 2 nm. The emission intensity with polarization of E ⊥ c and the degree of polarization were found to decrease with increasing well width. The emission intensity with polarization of E ∥ c was found to increase with increasing well width.