A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates
A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates
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DOI：
10.1016/j.jallcom.2013.04.036
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发表时间：
2013-10
影响因子：
6.2
通讯作者：
Yongfeng Li;B. Yao;R. Deng;Binghui Li;Zhenzhong Zhang;C. Shan;Dongxu Zhao;D. Shen
中科院分区：
文献类型：
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作者：
Yongfeng Li;B. Yao;R. Deng;Binghui Li;Zhenzhong Zhang;C. Shan;Dongxu Zhao;D. Shen
比较研究了生长在不同晶格失配衬底上的非对称p-Mg 0. 05 Zn 0. 95 O/i-ZnO/n+-GaN和p-Mg 0. 05 Zn 0. 95 O/i-ZnO/n+-Si双异质结发光二极管（LED）的电致发光（EL）性能。I-V曲线测量表明，p-Mg 0. 05 Zn 0. 95 O/i-ZnO/n+-GaN和p-Mg 0. 05 Zn 0. 95 O/i-ZnO/n+-Si双异质结具有明显的整流特性，阈值电压分别为3.8和6 V。在小晶格失配的n +-GaN衬底上生长的p-Mg 0. 05 Zn 0. 95 O/i-ZnO/n+-GaN双异质结具有较强的紫-紫外电致发光，无深能级发射。相比之下，生长在大晶格失配n +-Si衬底上的p-Mg_（0.05）Zn_（0.95）O/i-ZnO/n+-Si双异质结，观察到一个主要的可见光发射带和一个微弱的紫外发射峰。两种LED之间的差异是由于在不同晶格失配衬底上生长的MgZnO和ZnO层的不同质量。
We have comparatively investigated the electroluminescence (EL) performance from the asymmetricp-Mg0.05Zn0.95O/i-ZnO/n+-GaN andp-Mg0.05Zn0.95O/i-ZnO/n+-Si double-heterojunction light emitting diodes (LEDs) grown on different lattice mismatch substrates. TheI–Vcurve measurements show clear rectification characteristics with a threshold voltage of 3.8 and 6 V for thep-Mg0.05Zn0.95O/i-ZnO/n+-GaN andp-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunctions, respectively. A strong violet-ultraviolet EL emission and no deep-level emission were observed for thep-Mg0.05Zn0.95O/i-ZnO/n+-GaN double heterojunction grown on small lattice-mismatchedn+-GaN substrate. In comparison, a dominant visible emission band and a weak ultraviolet emission peak were observed forp-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunction grown on large lattice-mismatchedn+-Si substrate. The difference between both LEDs is due to different quality of the MgZnO and ZnO layers grown on different lattice mismatch substrates.