Van der Waals Integrated LiNbO3/WS2 for High‐Performance UV–Vis–NIR Photodetection

Van der Waals Integrated LiNbO3/WS2 for High‐Performance UV–Vis–NIR Photodetection
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DOI:
10.1002/lpor.202300286
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发表时间:
2023-07
影响因子:
11
通讯作者:
Xijie Liang;Heyuan Guan;Kaiwen Luo;Zhigang He;Aijie Liang;Weina Zhang;Qijing Lin;Zuoxin Yang;Haoran Zhang;Cheng Xu;Hanrong Xie;Fengli Liu;F. Ma;Tiefeng Yang;Huihui Lu
Xijie Liang;Heyuan Guan;Kaiwen Luo;Zhigang He;Aijie Liang;Weina Zhang;Qijing Lin;Zuoxin Yang;Haoran Zhang;Cheng Xu;Hanrong Xie;Fengli Liu;F. Ma;Tiefeng Yang;Huihui Lu
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Xijie Liang;Heyuan Guan;Kaiwen Luo;Zhigang He;Aijie Liang;Weina Zhang;Qijing Lin;Zuoxin Yang;Haoran Zhang;Cheng Xu;Hanrong Xie;Fengli Liu;F. Ma;Tiefeng Yang;Huihui Lu

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由于其结构的各向异性和铁电特性,锂离子电池被广泛应用于各种光电系统中,是下一代集成光电子学最重要的平台之一。然而,LN的绝缘和光学透明特性极大地限制了其在光电探测中的应用。在这里,通过货车德瓦尔斯集成策略实现了基于LN/WS 2的高性能光电探测器,其中LN的热释电性质和WS 2的适度带隙被很好地结合。在光照下,WS 2中的光致载流子会增加,LN的热释电电荷会穿过界面间隙并不对称地注入WS 2中,形成n-/n+同质结,从而提高通态电流。在黑暗条件下,激光的突然移除将在LN晶格中引入偏振的瞬时增强,从而导致对WS 2中剩余载流子的限制得到改善,从而实现较低的暗电流。在这方面,所配置的器件在零偏置下获得大于104的高开/关比,这在所有报道的基于LN的光电探测器中是最好的。该工作实现了二维材料与铁电LN的互补集成,为基于LN平台的高性能光电探测器提供了一条可行的途径。
Lithium niobate (LN) is widely used in various optoelectronic systems due to its structural anisotropy and ferroelectric feature, which is one of the most essential platforms for next‐generation integrated optoelectronics. However, the insulating and optically transparent characteristics of LN have greatly limited the application in photodetection. Here, a high‐performance LN/WS2 based photodetector is achieved through a van der Waals integration strategy in which the pyroelectric property of LN and the moderate bandgap of WS2 are well combined. Upon light illumination, the light induced carriers in WS2 would increase and the pyroelectric charges of LN will cross the interfacial gap and asymmetrically inject into the WS2, creating an n−/n+ homojunction, thus improving the on‐state current. Under dark conditions, the sudden removal of the laser would introduce an instantaneous enhancement of polarization in the LN lattice, leading to an improved confinement on the remaining carriers in WS2, achieving a lower dark current. In this regard, the configurated device acquires a high on/off ratio more than 104 under zero bias, which represents the best among all the reported LN‐based photodetectors. This work realizes the complementary integration of 2D materials and ferroelectric LN and provides a feasible way for high‐performance photodetectors based on the LN platform.