Key technologies of a focused ion beam system for single ion implantation
Key technologies of a focused ion beam system for single ion implantation
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单离子注入聚焦离子束系统关键技术
DOI：
10.1116/1.590194
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发表时间：
1998
影响因子：
1.4
通讯作者：
I. Ohdomari
中科院分区：
文献类型：
--
作者：
T. Matsukawa;T. Shinada;T. Fukai;I. Ohdomari
专门改造了聚焦离子束（FIB）系统，以实现单离子注入（SII），旨在将精确数量的离子一个接一个地注入超细半导体区域。在SII中，通过对离子束进行斩波来提取单个离子，并且通过安装用于斩波的超高速放大器，可以逐个提取离子。为了实现对 SII 中每个单离子入射的精确检测，以高灵敏度和高信噪比 (S/N) 检测离子入射时发射的 SE 至关重要。来自SE检测器的与斩波实例同步的信号被选择性地计数以实现高信噪比。通过将离子源滑离束轴并在 FIB 质量分离器入口处切断离子束，可以消除源自离子束中和和散射的污染物颗粒。
A focused ion beam (FIB) system was remodeled specially to realize single ion implantation (SII) by which we intended to implant an accurate number of ions one by one into ultrafine semiconductor regions. In the SII, single ions are extracted by chopping the ion beam, and one-by-one extraction of ions have become possible by installing an ultrahigh speed amplifier for chopping. In order to achieve accurate detection of each single ion incidence in the SII, detection of SEs emitted upon ion incidence with a high sensitivity and a high signal to noise (S/N) ratio is essential. Signals from the SE detector which synchronize to an instance of chopping are selectively counted to achieve high S/N ratio. Contaminant particles originating from neutralization and scattering of the ion beam are eliminated by sliding the ion source off the beam axis and cutting off the ion beam at the entrance of the FIB’s mass separator.