Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface
Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface
复制标题
硅表面自组装镓液滴制备高密度纳米孔
DOI：
10.1166/mex.2012.1070
复制
发表时间：
2012
影响因子：
0.7
通讯作者：
K. K. Nanda
中科院分区：
文献类型：
--
作者：
R. P. Sugavaneshwar;長尾忠昭;K. K. Nanda
我们报道了利用硅在镓中的溶解度，通过局部液滴刻蚀在硅表面制备纳米孔。纳米尺寸的镓液滴在中等温度（~ 500°C）下在真空中退火时产生纳米孔，而不影响其他区域。高真空和适度的退火温度是获得与Ga液滴直径相当的定义良好的纳米孔的关键参数。Ga液滴的自组装导致4-8 × 1010/cm 2的纳米孔密度。
We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultrahigh vacuum at moderate temperatures (∼ 500°C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Selfassembly of Ga droplet leads to a nanohole density of 4–8 × 1010/cm2 .