Crystal growth and characterization of topological insulator BiSb thin films by sputtering deposition on sapphire substrates
Crystal growth and characterization of topological insulator BiSb thin films by sputtering deposition on sapphire substrates
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DOI：
10.35848/1347-4065/ab91d0
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发表时间：
2020-06-01
影响因子：
1.5
通讯作者：
Pham Nam Hai
中科院分区：
文献类型：
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作者：
Fan, Tuo;Tobah, Mustafa;Pham Nam Hai
我们报告的BiSb薄膜沉积在蓝宝石衬底上的溅射沉积与Ar和氪等离子体的生长和表征。通过优化生长条件，我们能够获得具有等效孪晶的准单晶BiSb（001）薄膜。在所研究的厚度下，BiSb的电导率超过10（5）Ω（-1）m（-1），在10 nm处达到1.8 x 10（5）Ω（-1）m（-1）。从电阻率的温度依赖性，我们证实了金属表面态的存在。我们的研究结果表明，这是可能的，以获得溅射BiSb薄膜的质量接近的外延BiSb的分子束外延生长。(C)2020日本应用物理学会
We report on the growth and characterization of BiSb thin films deposited on sapphire substrates by sputtering deposition with Ar and Kr plasma. By optimizing the growth conditions, we are able to obtain quasi-single-crystal BiSb(001) thin films with equivalent twin crystals. The conductivity of BiSb at the studied thicknesses exceeds 10(5) Omega(-1) m(-1), reaching 1.8 x 10(5) Omega(-1) m(-1) at 10 nm. From the temperature dependence of the electrical resistivity, we confirm the existence of metallic surface states. Our results demonstrate that it is possible to obtain sputtered BiSb thin films with quality approaching that of epitaxial BiSb grown by molecular beam epitaxy. (C) 2020 The Japan Society of Applied Physics