MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)
MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)
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DOI：
10.1016/s0022-0248(02)02145-0
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发表时间：
2003-02-01
影响因子：
1.8
通讯作者：
McElwee-White, L
中科院分区：
文献类型：
--
作者：
Bchir, OJ;Johnston, SW;McElwee-White, L
以单源前驱体Cl-4（CH 3CN）W（（NPr）-Pr-i）为原料，采用MOCVD方法制备了氮化钨（WNN）薄膜。采用X射线衍射（XRD）、俄歇电子能谱（AES）和截面扫描电子显微镜（X-SEM）对薄膜进行分析，采用四探针法测量薄膜电阻率。在450- 700 ℃的温度范围内，薄膜生长速率为10 - 27埃/分钟。在动力学控制制度的膜生长的表观活化能为0.84 eV。在低于500 degreesC的温度下生长的膜是无定形的，在450 degreesC下沉积的膜的电阻率和薄层电阻分别为750 μ Ω cm和47 Ω/平方。(C)2002 Elsevier Science B. V.保留所有权利。
Thin films of tungsten nitride (WNN) were deposited by MOCVD from the single-source precursor Cl-4(CH3CN)W((NPr)-Pr-i). Films were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and cross-section scanning electron microscopy (X-SEM), while the film resistivity was determined by four-point probe. Film growth rates ranged from 10 to 27 Angstrom/min within a temperature range of 450-700degreesC. The apparent activation energy for film growth in the kinetically controlled regime was 0.84 eV. Films grown at temperatures below 500degreesC were amorphous, with minimum film resistivity and sheet resistance of 750 muOmega cm and 47 Omega/square, respectively, occurring for deposition at 450degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.