High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
复制标题
采用镍微电镀形成互连的碳化硅功率器件的耐高温封装
DOI：
10.4028/www.scientific.net/msf.778-780.1110
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
K. Tatsumi
中科院分区：
文献类型：
--
作者：
Noriyuki Kato;Akiyoshi Shigenaga;K. Tatsumi
高温SiC器件要求其封装材料也能在比硅器件更高的温度下工作。SiC器件有望帮助混合动力汽车电源控制单元（pcu）以更紧凑的尺寸产生更高的功率，因为SiC可以承受比硅更高的电压和温度（高于300°C），功耗更低。互连技术的改进日益成为重中之重，特别是对于SiC器件在相对高温下的运行。我们提出了一种新的互连方法，用电镀镍代替铝丝键合或用焊料材料进行模键合。在评估高达500°C退火互连的可靠性期间，我们观察到机械或电气性能没有显着变化。我们发现微镀连接可以成功地用于SiC器件的耐高温封装。
High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.