Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate
Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate
复制标题
利用 GaAs (001) 基板上的厚度和纵横比定制 CoFe 纳米层图案中的磁畴和磁化开关
DOI：
10.1002/pssb.202100519
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Hara Shinjiro
中科院分区：
文献类型：
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作者：
Teramoto Keigo;Horiguchi Ryoma;Dai Wei;Adachi Yusuke;Akabori Masashi;Hara Shinjiro
在室温下，利用磁力显微镜直接研究了GaAs（001）衬底上CoFe纳米层磁畴形成的厚度和纵横比依赖关系。在as -沉积条件下的磁力显微镜观察表明，图案中磁畴的形成很大程度上取决于图案的长宽比和厚度以及衬底的晶体取向。单个磁畴更容易在具有较高长宽比的图案中形成，具有更薄的纳米层厚度，并且沿着基板的⟨110⟩方向。磁场随后在与底物的⟨1-10⟩和⟨110⟩方向平行的方向上施加，以表征图案中的磁化开关行为。图案的长宽比和厚度以及衬底的晶体取向强烈地影响图案中磁化开关所需的磁场。更高的磁场需要更高的纵横比和更薄的纳米层厚度的图案。所有的直接观察证实，磁畴结构和磁化开关是通过控制图案的宽高比和厚度以及衬底的晶体取向来调节的。
The thickness and aspect ratio dependence of magnetic domain formation in CoFe nanolayer patterns on GaAs (001) substrates are investigated by means of a direct approach using magnetic force microscopy at room temperature. Magnetic force microscope observations under as‐deposition condition show that magnetic domain formation in the patterns depends strongly on the aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates. A single magnetic domain is more easily formed in the patterns with a higher aspect ratio, with a thinner nanolayer thickness, and along the ⟨110⟩ direction of the substrates. The magnetic fields are next applied in the direction parallel to the ⟨1–10⟩ and ⟨110⟩ orientations of the substrates to characterize a magnetization switching behavior in the patterns. The aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates strongly affect the magnetic fields needed for magnetization switching in the patterns. A higher magnetic field is required for a higher aspect ratio and a thinner nanolayer thickness of the patterns. All the direct observations confirm that the magnetic domain structures and magnetization switching are tuned by controlling aspect ratio and thickness of the patterns and the crystallographic orientations of the substrates.