Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films
Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films
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DOI：
10.1016/s0257-8972(98)00727-0
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发表时间：
1999-01
影响因子：
5.4
通讯作者：
S. Bhagwat;R. Howson
中科院分区：
文献类型：
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作者：
S. Bhagwat;R. Howson
铟锡氧化物薄膜的化学计量控制，以获得最佳的电气和光学性能。它们是在室温下通过直流磁控溅射沉积在玻璃基底上的。并对薄膜的力学性能进行了研究。初步的实验表明，电阻率对膜厚的依赖性。受控过程产生约10−5Ωm的电阻率和约85%的可见光透射率。在氩气气氛中退火可以提高ITO薄膜的性能。
Indium tin oxide films were made with their stoichiometry controlled to give optimum electrical and optical properties. They were deposited by d.c. magnetron sputtering on glass substrates at room temperature. The mechanical properties of these films were also studied. The initial experiments show the dependence of resistivity on film thickness. The controlled processes gave a resistivity of about 10−5Ωm and visible transmission of about 85%. The performance of ITO films can be increased by annealing the films in argon ambient.